| PART |
Description |
Maker |
| Q62702-F457 Q62702-F456 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| AP2127 |
EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
BCD
|
| AP2121AK3.2TRE1 AP2121AN3.2TRE1 AP2121AK1.5TRE1 AP |
150mA EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
|
| AP2121 AP2121AK-1.8TRE1 AP2121AK-3.0TRE1 AP2121AK- |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manuf...
BCD Semiconductor Manufacturing Limited
http://
|
| UPA811T-T1 UPA811 UPA811T PA811T |
Low Noise, High Frequncy Amplifer NPN Transistor(楂??浣??澹版?澶у?NPN?朵?绠?
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD
Low Noise, High Frequncy Amplifer NPN Transistor(高频低噪声放大器NPN晶体
|
NEC[NEC]
NEC Corp.
|
| BFP520 Q62702-F1794 Q62702-F1491 |
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| PMV56XN PMV56XN-01 |
uTrenchMOS (tm) extremely low level FET
From old datasheet system
mTrenchMOS extremely low level FET
|
Philips
|
| 2SC5472 2SC547 |
Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation) L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| 2SC4092 2SC4092R4 2SC4092RD 2SC4092R5 2SC4092-T1 2 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
BJT
For amplify high frequency and low noise.
|
NEC Corp.
NEC[NEC]
|
